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20V|1.6A|560mW
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MOSFET 2P-CH 20V 1.6A 6TSOP
Specifications
- Brand
- ON Semiconductor
- Package
- SOT-23-6 Thin, TSOT-23-6
- Packaging
- —
- Weight
- —
Total Inventory
202pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NTGD3133PT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | 2 P-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 1.6A | |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 2.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 10V | |
| Power - Max | 560mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Supplier Device Package | 6-TSOP |
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Datasheet & Documents
ntgd3133pt1g.pdf
PDF Document · 6 pages
