Heisener Electronics
BOM

NTD4909NT4G

30V|8.8A (Ta), 41A (Tc)|1.37W (Ta), 29.4W (Tc)
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MOSFET N-CH 30V 8.8A SGL DPAK

Specifications

Brand
ON Semiconductor
Package
DPAK
Packaging
—
Weight
—

Total Inventory

151pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTD4909NT4G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C8.8A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1314pF @ 15V
FET Feature-
Power Dissipation (Max)1.37W (Ta), 29.4W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

ntd4909n-1g.pdf

PDF Document · 8 pages

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