Heisener Electronics
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NTD4863NAT4G

25V|9.2A (Ta), 49A (Tc)|1.27W (Ta), 36.6W (Tc)
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MOSFET N-CH 25V 9.2A DPAK

Specifications

Brand
ON Semiconductor
Package
DPAK
Packaging
—
Weight
—

Total Inventory

319pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTD4863NAT4G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C9.2A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs9.3mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs13.5nC @ 4.5V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds990pF @ 12V
FET Feature-
Power Dissipation (Max)1.27W (Ta), 36.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

ntd4863na-35g.pdf

PDF Document · 8 pages

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