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NTD4858NA-1G

25V|11.2A (Ta), 73A (Tc)|1.3W (Ta), 54.5W (Tc)
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MOSFET N-CH 25V 11.2A IPAK

Specifications

Brand
ON Semiconductor
Package
I-PAK
Packaging
—
Weight
—

Total Inventory

424pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTD4858NA-1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C11.2A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs6.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19.2nC @ 4.5V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1563pF @ 12V
FET Feature-
Power Dissipation (Max)1.3W (Ta), 54.5W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

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Datasheet & Documents

ntd4858nat4g.pdf

PDF Document · 9 pages

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