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30V|11.3A (Ta), 79A (Tc)|1.4W (Ta), 68W (Tc)
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MOSFET N-CH 30V 11A IPAK
Specifications
- Brand
- ON Semiconductor
- Package
- I-PAK
- Packaging
- —
- Weight
- —
Total Inventory
359pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NTD4806N-1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 11.3A (Ta), 79A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V | |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 4.5V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2142pF @ 12V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.4W (Ta), 68W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | I-PAK | |
| Package / Case | TO-251-3 Stub Leads, IPak |
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Datasheet & Documents
nvd4806nt4g.pdf
PDF Document · 8 pages
