Heisener Electronics
BOM

NTD3813NT4G

16V|9.6A (Ta), 51A (Tc)|1.2W (Ta), 34.9W (Tc)
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MOSFET N-CH 16V 9.6A DPAK

Specifications

Brand
ON Semiconductor
Package
DPAK
Packaging
—
Weight
—

Total Inventory

418pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTD3813NT4G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16V
Current - Continuous Drain (Id) @ 25°C9.6A (Ta), 51A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.8nC @ 4.5V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds963pF @ 12V
FET Feature-
Power Dissipation (Max)1.2W (Ta), 34.9W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

ntd3813nt4g.pdf

PDF Document · 8 pages

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