Heisener Electronics
BOM

NTD18N06LG

60V|18A (Ta)|2.1W (Ta), 55W (Tj)
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MOSFET N-CH 60V 18A DPAK

Specifications

Brand
ON Semiconductor
Package
DPAK
Packaging
—
Weight
—

Total Inventory

417pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTD18N06LG from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs65mOhm @ 9A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds675pF @ 25V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 55W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

ntdv18n06lt4g.pdf

PDF Document · 7 pages

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