Heisener Electronics
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NTB082N65S3F

650V|40A (Tc)|313W (Tc)
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SUPERFET3 650V D2PAK PKG

Specifications

Brand
ON Semiconductor
Package
D²PAK (TO-263)
Packaging
—
Weight
—

Total Inventory

426pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTB082N65S3F from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesSuperFET® III
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs82mOhm @ 20A, 10V
Vgs(th) (Max) @ Id5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs81nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3410pF @ 400V
FET Feature-
Power Dissipation (Max)313W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

ntb082n65s3f.pdf

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