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350V|100mA|800mW
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TRANS NPN 350V 0.1A SOT223
Specifications
- Brand
- ON Semiconductor
- Package
- TO-261-4, TO-261AA
- Packaging
- —
- Weight
- —
Total Inventory
290pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NSVBSP19AT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 350V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA | |
| Current - Collector Cutoff (Max) | 20nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V | |
| Power - Max | 800mW | |
| Frequency - Transition | 70MHz | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-261-4, TO-261AA | |
| Supplier Device Package | SOT-223 (TO-261) |
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Datasheet & Documents
nsvbsp19at1g.pdf
PDF Document · 5 pages
