Heisener Electronics
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NSVBSP19AT1G

350V|100mA|800mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN 350V 0.1A SOT223

Specifications

Brand
ON Semiconductor
Package
TO-261-4, TO-261AA
Packaging
—
Weight
—

Total Inventory

290pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NSVBSP19AT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)350V
Vce Saturation (Max) @ Ib, Ic500mV @ 4mA, 50mA
Current - Collector Cutoff (Max)20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 20mA, 10V
Power - Max800mW
Frequency - Transition70MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-261-4, TO-261AA
Supplier Device PackageSOT-223 (TO-261)

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Datasheet & Documents

nsvbsp19at1g.pdf

PDF Document · 5 pages

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