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NSVB114YPDXV6T1G

50V|100mA|500mW
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TRANS BRT 50V 100MA SOT563

Specifications

Brand
ON Semiconductor
Package
SOT-563, SOT-666
Packaging
—
Weight
—

Total Inventory

150pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NSVB114YPDXV6T1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563

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Datasheet & Documents

nsvb114ypdxv6t1g.pdf

PDF Document · 10 pages

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