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Send MessageNSBC115TDP6T5G
50V|100mA|339mW
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TRANS 2NPN PREBIAS 0.339W SOT963
Specifications
- Brand
- ON Semiconductor
- Package
- SOT-963
- Packaging
- —
- Weight
- —
Total Inventory
124pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NSBC115TDP6T5G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Transistor Type | 2 NPN - Pre-Biased (Dual) | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 100kOhms | |
| Resistor - Emitter Base (R2) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| Frequency - Transition | - | |
| Power - Max | 339mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-963 | |
| Supplier Device Package | SOT-963 |
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Datasheet & Documents
nsbc115tdp6t5g.pdf
PDF Document · 5 pages
