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NSBC114TDP6T5G

50V|100mA|339mW
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TRANS 2NPN PREBIAS 0.339W SOT963

Specifications

Brand
ON Semiconductor
Package
SOT-963
Packaging
—
Weight
—

Total Inventory

227pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NSBC114TDP6T5G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)-
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max339mW
Mounting TypeSurface Mount
Package / CaseSOT-963
Supplier Device PackageSOT-963

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Datasheet & Documents

nsbc114tdxv6t5g.pdf

PDF Document · 8 pages

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