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NSBA114YF3T5G

50V|100mA|254mW
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TRANS PREBIAS PNP 254MW SOT1123

Specifications

Brand
ON Semiconductor
Package
SOT-1123
Packaging
—
Weight
—

Total Inventory

420pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NSBA114YF3T5G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max254mW
Mounting TypeSurface Mount
Package / CaseSOT-1123
Supplier Device PackageSOT-1123

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Datasheet & Documents

nsba114yf3t5g.pdf

PDF Document · 12 pages

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