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10V|1A
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DIODE SCHOTTKY 10V 1A POWERMITE
Specifications
- Brand
- ON Semiconductor
- Package
- DO-216AA
- Packaging
- —
- Weight
- —
Total Inventory
218pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NRVBM110LT3G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | POWERMITE® | |
| Diode Type | Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 10V | |
| Current - Average Rectified (Io) | 1A | |
| Voltage - Forward (Vf) (Max) @ If | 415mV @ 2A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 500µA @ 10V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-216AA | |
| Supplier Device Package | Powermite | |
| Operating Temperature - Junction | -55°C ~ 125°C |
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Datasheet & Documents
nrvbm110lt1g.pdf
PDF Document · 5 pages
