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350V|10A|150W
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TRANS NPN DARL 350V 10A D2PAK
Specifications
- Brand
- ON Semiconductor
- Package
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Packaging
- —
- Weight
- —
Total Inventory
376pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NJVBUB323ZT4G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Transistor Type | NPN - Darlington | |
| Current - Collector (Ic) (Max) | 10A | |
| Voltage - Collector Emitter Breakdown (Max) | 350V | |
| Vce Saturation (Max) @ Ib, Ic | 1.7V @ 250mA, 10A | |
| Current - Collector Cutoff (Max) | 100µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 500 @ 5A, 4.6V | |
| Power - Max | 150W | |
| Frequency - Transition | 2MHz | |
| Operating Temperature | -65°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | D2PAK-3 |
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Datasheet & Documents
bub323z.pdf
PDF Document · 8 pages










