Heisener Electronics
BOM

NJVBDX53C

100V|8A|65W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN DARL 100V 8A TO-220AB

Specifications

Brand
ON Semiconductor
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

168pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NJVBDX53C from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)8A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic2V @ 12mA, 3A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 3A, 3V
Power - Max65W
Frequency - Transition-
Operating Temperature-
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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