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350V|4A|45W
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TRANS NPN DARL 350V 4A DPAK
Specifications
- Brand
- ON Semiconductor
- Package
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Packaging
- —
- Weight
- —
Total Inventory
4,708pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NJD35N04G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Transistor Type | NPN - Darlington | |
| Current - Collector (Ic) (Max) | 4A | |
| Voltage - Collector Emitter Breakdown (Max) | 350V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 20mA, 2A | |
| Current - Collector Cutoff (Max) | 50µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 2000 @ 2A, 2V | |
| Power - Max | 45W | |
| Frequency - Transition | 90MHz | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Supplier Device Package | DPAK |
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Datasheet & Documents
njvnjd35n04g.pdf
PDF Document · 4 pages










