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NIF9N05CLT3G

59V|2.6A (Ta)|1.69W (Ta)
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MOSFET N-CH 59V 2.6A SOT223

Specifications

Brand
ON Semiconductor
Package
SOT-223
Packaging
—
Weight
—

Total Inventory

271pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NIF9N05CLT3G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)59V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)3V, 10V
Rds On (Max) @ Id, Vgs125mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 4.5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 35V
FET Feature-
Power Dissipation (Max)1.69W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

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Datasheet & Documents

nif9n05clt1g.pdf

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