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59V|2.6A (Ta)|1.69W (Ta)
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MOSFET N-CH 59V 2.6A SOT223
Specifications
- Brand
- ON Semiconductor
- Package
- SOT-223
- Packaging
- —
- Weight
- —
Total Inventory
335pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NIF9N05CLT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 59V | |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 10V | |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.6A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 4.5V | |
| Vgs (Max) | ±15V | |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 35V | |
| FET Feature | - | |
| Power Dissipation (Max) | 1.69W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-223 | |
| Package / Case | TO-261-4, TO-261AA |
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Datasheet & Documents
nif9n05clt1g.pdf
PDF Document · 6 pages
