Heisener Electronics
BOM

NIF9N05CLT1G

59V|2.6A (Ta)|1.69W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 59V 2.6A SOT223

Specifications

Brand
ON Semiconductor
Package
SOT-223
Packaging
—
Weight
—

Total Inventory

335pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NIF9N05CLT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)59V
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)3V, 10V
Rds On (Max) @ Id, Vgs125mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs7nC @ 4.5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds250pF @ 35V
FET Feature-
Power Dissipation (Max)1.69W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

Recommended Products

2225J5000274KDR

2225J5000274KDR

CAP CER 0.27UF 500V X7R 2225

0805Y1002P70CFT

0805Y1002P70CFT

CAP CER 2.7PF 100V C0G/NP0 0805

1206Y0160180KFT

1206Y0160180KFT

CAP CER 18PF 16V C0G/NP0 1206

T491D107K006AS

T491D107K006AS

CAP TANT 100UF 10% 6.3V 2917

EUS-14-131-025-1192A

EUS-14-131-025-1192A

(14-131.025-1192A) PUSHBUTTON/ M

DG413LEDY-T1-GE3

DG413LEDY-T1-GE3

IC SWITCH QUAD SPST 16-SOIC

P4SMA160A

P4SMA160A

TVS DIODE 136V 219V DO214AC

5-1123724-2

5-1123724-2

EP HEADERS

D38999-23HC4XE

D38999-23HC4XE

D38999/23HC4XE

TVP00RW-11-2PA

TVP00RW-11-2PA

CONN RCPT MALE 2POS GOLD CRIMP

Datasheet & Documents

nif9n05clt1g.pdf

PDF Document · 6 pages

Download

Datasheet Preview

Download