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650V|-
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DIODE GEN PURP 650V DIE
Specifications
- Brand
- ON Semiconductor
- Package
- Die
- Packaging
- —
- Weight
- —
Total Inventory
317pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NGTD8R65F2WP from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Current - Average Rectified (Io) | - | |
| Voltage - Forward (Vf) (Max) @ If | 2.8V @ 30A | |
| Speed | - | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 1µA @ 650V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die | |
| Operating Temperature - Junction | 175°C (Max) |
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Datasheet & Documents
ngtd8r65f2swk.pdf
PDF Document · 3 pages
