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Send MessageNGTD28T65F2WP
IGBT TRENCH FIELD STOP 650V DIE
Specifications
- Brand
- ON Semiconductor
- Package
- Die
- Packaging
- —
- Weight
- —
Total Inventory
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NGTD28T65F2WP from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| IGBT Type | Trench Field Stop | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Current - Collector (Ic) (Max) | - | |
| Current - Collector Pulsed (Icm) | 200A | |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 75A | |
| Power - Max | - | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | - | |
| Td (on/off) @ 25°C | - | |
| Test Condition | - | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die |
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Datasheet & Documents
ngtd28t65f2swk.pdf
PDF Document · 3 pages
Datasheet Preview
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