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NGTD28T65F2WP

650V|-|-
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IGBT TRENCH FIELD STOP 650V DIE

Specifications

Brand
ON Semiconductor
Package
Die
Packaging
—
Weight
—

Total Inventory

372pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NGTD28T65F2WP from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)-
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 75A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie

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Datasheet & Documents

ngtd28t65f2swk.pdf

PDF Document · 3 pages

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Datasheet Preview

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