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Send MessageNGTD13T65F2WP
650V|-|-
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IGBT TRENCH FIELD STOP 650V DIE
Specifications
- Brand
- ON Semiconductor
- Package
- Die
- Packaging
- —
- Weight
- —
Total Inventory
245pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NGTD13T65F2WP from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| IGBT Type | Trench Field Stop | |
| Voltage - Collector Emitter Breakdown (Max) | 650V | |
| Current - Collector (Ic) (Max) | - | |
| Current - Collector Pulsed (Icm) | 120A | |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 30A | |
| Power - Max | - | |
| Switching Energy | - | |
| Input Type | Standard | |
| Gate Charge | - | |
| Td (on/off) @ 25°C | - | |
| Test Condition | - | |
| Reverse Recovery Time (trr) | - | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | Die | |
| Supplier Device Package | Die |
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Datasheet & Documents
ngtd13t65f2wp.pdf
PDF Document · 3 pages
