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1200V|80A|535W
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IGBT 40A 1200V TO-247
Specifications
- Brand
- ON Semiconductor
- Package
- TO-247-3
- Packaging
- —
- Weight
- —
Total Inventory
108pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NGTB40N120SWG from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| IGBT Type | Trench | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Current - Collector (Ic) (Max) | 80A | |
| Current - Collector Pulsed (Icm) | 200A | |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A | |
| Power - Max | 535W | |
| Switching Energy | 3.4mJ (on), 1.1mJ (off) | |
| Input Type | Standard | |
| Gate Charge | 313nC | |
| Td (on/off) @ 25°C | 116ns/286ns | |
| Test Condition | 600V, 40A, 10Ohm, 15V | |
| Reverse Recovery Time (trr) | 240ns | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247-3 |
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Datasheet & Documents
ngtb40n120swg.pdf
PDF Document · 5 pages










