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NGTB40N120SWG

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Part Number

NGTB40N120SWG

Manufacturer

ON Semiconductor

Description

IGBT 40A 1200V TO-247

Lifecycle

Obsolete

RoHS

No RoHS Information

EDA/CAD Models

NGTB40N120SWG PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:108 pcs

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NGTB40N120SWG 规格

Manufacturer
ON Semiconductor
Series
-
IGBT Type
Trench
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
80A
Current - Collector Pulsed (Icm)
200A
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 40A
Power - Max
535W
Switching Energy
3.4mJ (on), 1.1mJ (off)
Input Type
Standard
Gate Charge
313nC
Td (on/off) @ 25°C
116ns/286ns
Test Condition
600V, 40A, 10Ohm, 15V
Reverse Recovery Time (trr)
240ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247-3

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全球供应链 – 可靠且授权的分销商资源

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NGTB40N120SWGON SemiconductorIGBT Single Transistor, 80 A, 2 V, 535 W, 1.2 kV, TO-247, 3 RoHS Compliant: Yes0

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