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NGTB25N120SWG

1200V|50A|385W
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IGBT 25A 1200V TO-247

Specifications

Brand
ON Semiconductor
Package
TO-247-3
Packaging
—
Weight
—

Total Inventory

464pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NGTB25N120SWG from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeTrench
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)50A
Current - Collector Pulsed (Icm)100A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 25A
Power - Max385W
Switching Energy1.95mJ (on), 600µJ (off)
Input TypeStandard
Gate Charge178nC
Td (on/off) @ 25°C87ns/179ns
Test Condition600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)154ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Datasheet & Documents

ngtb25n120swg.pdf

PDF Document · 5 pages

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