Heisener Electronics
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NGB8206N

390V|20A|150W
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IGBT 390V 20A 150W D2PAK

Specifications

Brand
ON Semiconductor
Package
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging
—
Weight
—

Total Inventory

324pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NGB8206N from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)390V
Current - Collector (Ic) (Max)20A
Current - Collector Pulsed (Icm)50A
Vce(on) (Max) @ Vge, Ic1.9V @ 4.5V, 20A
Power - Max150W
Switching Energy-
Input TypeLogic
Gate Charge-
Td (on/off) @ 25°C-/5µs
Test Condition300V, 9A, 1kOhm, 5V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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Datasheet & Documents

ngb8206ntf4g.pdf

PDF Document · 8 pages

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Datasheet Preview

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