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20V|1.1A (Ta)|500mW (Ta)
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MOSFET P-CH 20V 1.1A SSOT-3
Specifications
- Brand
- ON Semiconductor
- Package
- SuperSOT-3
- Packaging
- —
- Weight
- —
Total Inventory
235pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NDS356P_1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 1.3A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 5V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 500mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SuperSOT-3 | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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Datasheet & Documents
nds356p.pdf
PDF Document · 7 pages
