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20V|20mA, 15mA
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
HIGH CURRENT IGBT GATE DR
Specifications
- Brand
- ON Semiconductor
- Package
- 8-SOIC (0.154", 3.90mm Width)
- Packaging
- —
- Weight
- —
Total Inventory
229pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NCV5701CDR2G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Driven Configuration | High-Side or Low-Side | |
| Channel Type | Single | |
| Number of Drivers | 1 | |
| Gate Type | IGBT | |
| Voltage - Supply | 20V | |
| Logic Voltage - VIL, VIH | 0.75V, 4.3V | |
| Current - Peak Output (Source, Sink) | 20mA, 15mA | |
| Input Type | Inverting | |
| High Side Voltage - Max (Bootstrap) | - | |
| Rise / Fall Time (Typ) | 9.2ns, 7.9ns | |
| Operating Temperature | -40°C ~ 125°C (TA) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SOIC |
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Datasheet & Documents
ncv5701cdr2g.pdf
PDF Document · 20 pages
