MVDF2C03HDR2G

30V|4.1A, 3A|2W

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MOSFET N/P-CH 30V 4.1A/3A 8SOIC

197pcs

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Purchase Quantity

MOQ: 1 pcs

Product Video

Manufacturer	ON Semiconductor
Series	-
FET Type	N and P-Channel Complementary
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4.1A, 3A
Rds On (Max) @ Id, Vgs	70mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	630pF @ 24V
Power - Max	2W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC