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30V|50A (Tc)|125W (Tc)
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INTEGRATED CIRCUIT
Specifications
- Brand
- ON Semiconductor
- Package
- D2PAK-3
- Packaging
- —
- Weight
- —
Total Inventory
433pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MVB50P03HDLT4G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | Automotive, AEC-Q101 | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 25A, 5V | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 100nC @ 5V | |
| Vgs (Max) | ±15V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4.9nF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 125W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D2PAK-3 | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Datasheet & Documents
mvb50p03hdlt4g.pdf
PDF Document · 9 pages
