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MTY100N10E

100V|100A (Tc)|300W (Tc)
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MOSFET N-CH 100V 100A TO-264

Specifications

Brand
ON Semiconductor
Package
TO-264
Packaging
—
Weight
—

Total Inventory

147pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MTY100N10E from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs378nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10640pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264
Package / CaseTO-264-3, TO-264AA

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Datasheet & Documents

mty100n10e.pdf

PDF Document · 7 pages

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