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MTP10N10ELG

100V|10A (Tc)|1.75W (Ta), 40W (Tc)
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MOSFET N-CH 100V 10A TO220AB

Specifications

Brand
ON Semiconductor
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

276pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MTP10N10ELG from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs220mOhm @ 5A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds1040pF @ 25V
FET Feature-
Power Dissipation (Max)1.75W (Ta), 40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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Datasheet & Documents

mtp10n10elg.pdf

PDF Document · 8 pages

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