Heisener Electronics
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MTB50P03HDLG

30V|50A (Tc)|2.5W (Ta), 125W (Tc)
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MOSFET P-CH 30V 50A D2PAK

Specifications

Brand
ON Semiconductor
Package
D2PAK
Packaging
—
Weight
—

Total Inventory

250pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MTB50P03HDLG from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs25mOhm @ 25A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100nC @ 5V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds4900pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

mtb50p03hdlg.pdf

PDF Document · 9 pages

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