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1.283V ~ 1.45V
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IC DRAM 2G PARALLEL DIE
Specifications
- Brand
- Micron Technology Inc.
- Package
- -
- Packaging
- —
- Weight
- —
Total Inventory
457pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MT41K256M8V89CWC1 from Micron Technology Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Micron Technology Inc. | |
| Series | - | |
| Memory Type | Volatile | |
| Memory Format | DRAM | |
| Technology | SDRAM - DDR3L | |
| Memory Size | 2Gb (256M x 8) | |
| Memory Interface | Parallel | |
| Clock Frequency | - | |
| Write Cycle Time - Word, Page | - | |
| Access Time | - | |
| Voltage - Supply | 1.283V ~ 1.45V | |
| Operating Temperature | 0°C ~ 95°C (TC) | |
| Mounting Type | - | |
| Package / Case | - | |
| Supplier Device Package | - |
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