Heisener Electronics
BOM

MT29F4G08ABBEAM70M3WC1

1.7V ~ 1.95V
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

IC FLASH 4G PARALLEL WAFER

Specifications

Brand
Micron Technology Inc.
Package
-
Packaging
—
Weight
—

Total Inventory

314pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MT29F4G08ABBEAM70M3WC1 from Micron Technology Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicron Technology Inc.
Series-
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND
Memory Size4Gb (512M x 8)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply1.7V ~ 1.95V
Operating Temperature0°C ~ 70°C (TA)
Mounting Type-
Package / Case-
Supplier Device Package-

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