Heisener Electronics
BOM

MT29F4G08ABADAH4-IT-D

2.7V ~ 3.6V
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

IC FLASH 4G PARALLEL 63VFBGA

Specifications

Brand
Micron Technology Inc.
Package
63-VFBGA
Packaging
—
Weight
—

Total Inventory

1,377pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MT29F4G08ABADAH4-IT-D from Micron Technology Inc. fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicron Technology Inc.
Series-
Memory TypeNon-Volatile
Memory FormatFLASH
TechnologyFLASH - NAND
Memory Size4Gb (512M x 8)
Memory InterfaceParallel
Clock Frequency-
Write Cycle Time - Word, Page-
Access Time-
Voltage - Supply2.7V ~ 3.6V
Operating Temperature-40°C ~ 85°C (TA)
Mounting TypeSurface Mount
Package / Case63-VFBGA
Supplier Device Package63-VFBGA (9x11)

Recommended Products

RNF12FTD17R4

RNF12FTD17R4

RES 17.4 OHM 1/2W 1% AXIAL

RG2012V-2101-W-T1

RG2012V-2101-W-T1

RES SMD 2.1K OHM 0.05% 1/8W 0805

MCS04020C3322FE000

MCS04020C3322FE000

RES SMD 33.2K OHM 1% 1/10W 0402

SIT9005AIT2H-25EO

SIT9005AIT2H-25EO

MEMS OSC PRG SSXO LVCMOS CS 2.5V

1111J5001P10CQT

1111J5001P10CQT

CAP CER 1.1PF 500V C0G/NP0 1111

C1206X241M5HAC7800

C1206X241M5HAC7800

CAP CER 1206 240PF 50V ULTRA STA

08052U3R3DAT2A

08052U3R3DAT2A

CAP CER 3.3PF 200V C0G/NP0 0805

8430290000

8430290000

RELAY GEN PURPOSE DPDT 5A 24V

S2JHM4G_1

S2JHM4G_1

DIODE GEN PURP 600V 2A DO214AA

T38058-14-0

T38058-14-0

CONN BARRIER STRP 14CIRC 0.375"