Heisener Electronics
BOM

MSRT250100A

1000 V|250A (DC)
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DIODE MODULE GP 1KV 250A 3TOWER

Specifications

Brand
GeneSiC Semiconductor
Package
Three Tower
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MSRT250100A from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerGeneSiC Semiconductor
Series-
Diode Configuration1 Pair Common Cathode
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)1000 V
Current - Average Rectified (Io) (per Diode)250A (DC)
Voltage - Forward (Vf) (Max) @ If1.2 V @ 250 A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr15 µA @ 600 V
Operating Temperature - Junction-55°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseThree Tower
Supplier Device PackageThree Tower

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