Heisener Electronics
BOM

MSRT20060-A-D

600V|200A
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DIODE GEN PURP 600V 200A 3 TOWER

Specifications

Brand
GeneSiC Semiconductor
Package
Three Tower
Packaging
—
Weight
—

Total Inventory

311pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MSRT20060-A-D from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerGeneSiC Semiconductor
Series-
Diode Configuration1 Pair Series Connection
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io) (per Diode)200A
Voltage - Forward (Vf) (Max) @ If1.1V @ 200A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr10µA @ 600V
Operating Temperature - Junction-55°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseThree Tower
Supplier Device PackageThree Tower

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