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1600 V|200A (DC)
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DIODE MODULE GP 1.6KV 3TOWER
Specifications
- Brand
- GeneSiC Semiconductor
- Package
- Three Tower
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MSRT200160A from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | GeneSiC Semiconductor | |
| Series | - | |
| Diode Configuration | 1 Pair Common Cathode | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1600 V | |
| Current - Average Rectified (Io) (per Diode) | 200A (DC) | |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 200 A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V | |
| Operating Temperature - Junction | -40°C ~ 175°C | |
| Mounting Type | Chassis Mount | |
| Package / Case | Three Tower | |
| Supplier Device Package | Three Tower |
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Interface
