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350 V|1 A|800 mW
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RH POWER BJT
Specifications
- Brand
- Microchip Technology
- Package
- TO-205AD, TO-39-3 Metal Can
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MSR2N3439 from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microchip Technology | |
| Series | - | |
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 1 A | |
| Voltage - Collector Emitter Breakdown (Max) | 350 V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA | |
| Current - Collector Cutoff (Max) | 2µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V | |
| Power - Max | 800 mW | |
| Frequency - Transition | - | |
| Operating Temperature | -55°C ~ 200°C | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | |
| Supplier Device Package | TO-39 (TO-205AD) |
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