Heisener Electronics
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MSCSM70VR1M03CT6AG

700V|585A (Tc)|1.625kW (Tc)
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SIC 2N-CH 700V 585A

Specifications

Brand
Microchip Technology
Package
Module
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MSCSM70VR1M03CT6AG from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrochip Technology
Series-
FET TypeSilicon Carbide (SiC)
FET Feature-
Drain to Source Voltage (Vdss)700V
Current - Continuous Drain (Id) @ 25°C585A (Tc)
Rds On (Max) @ Id, Vgs3.8mOhm @ 200A, 20V
Vgs(th) (Max) @ Id2.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs1075nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds22500pF @ 700V
Power - Max1.625kW (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package-

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