Heisener Electronics
BOM

MSCSM170HRM451AG

1700V (1.7kV), 1200V (1.2kV)|64A (Tc), 89A (Tc)|319W (Tc), 395W (Tc)
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SIC 4N-CH 1700V/1200V 64A/89A

Specifications

Brand
Microchip Technology
Package
Module
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MSCSM170HRM451AG from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrochip Technology
Series-
FET TypeSilicon Carbide (SiC)
FET Feature-
Drain to Source Voltage (Vdss)1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C64A (Tc), 89A (Tc)
Rds On (Max) @ Id, Vgs45mOhm @ 30A, 20V, 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id3.2V @ 2.5mA, 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs178nC @ 20V, 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds3300pF @ 1000V, 3020pF @ 1000V
Power - Max319W (Tc), 395W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package-

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