Heisener Electronics
BOM

MSCSM170HRM11NG

1700V (1.7kV), 1200V (1.2kV)|226A (Tc), 163A (Tc)|1.012kW (Tc), 662W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

SIC 4N-CH 1700V/1200V 226A

Specifications

Brand
Microchip Technology
Package
Module
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MSCSM170HRM11NG from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrochip Technology
Series-
FET TypeSilicon Carbide (SiC)
FET Feature-
Drain to Source Voltage (Vdss)1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C226A (Tc), 163A (Tc)
Rds On (Max) @ Id, Vgs11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id3.2V @ 10mA, 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs712nC @ 20V, 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds13200pF @ 1000V, 6040pF @ 1000V
Power - Max1.012kW (Tc), 662W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package-

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