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1.7 kV|50 A
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PM-DIODE-SIC-SBD-SP1F
Specifications
- Brand
- Microchip Technology
- Package
- Module
- Packaging
- —
- Weight
- —
Total Inventory
21pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MSCDC50H1701AG from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microchip Technology | |
| Series | - | |
| Diode Type | Single Phase | |
| Technology | Silicon Carbide Schottky | |
| Voltage - Peak Reverse (Max) | 1.7 kV | |
| Current - Average Rectified (Io) | 50 A | |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 50 A | |
| Current - Reverse Leakage @ Vr | 200 µA @ 1700 V | |
| Operating Temperature | -40°C ~ 175°C (TJ) | |
| Mounting Type | Chassis Mount | |
| Package / Case | Module | |
| Supplier Device Package | - |
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