Heisener Electronics
BOM

MSC80806

-|-|-
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

RF POWER TRANSISTOR

Specifications

Brand
Microsemi
Package
-
Packaging
—
Weight
—

Total Inventory

347pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MSC80806 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor Type-
Voltage - Collector Emitter Breakdown (Max)-
Frequency - Transition-
Noise Figure (dB Typ @ f)-
Gain-
Power - Max-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Current - Collector (Ic) (Max)-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

Recommended Products

Y0007596R9856B9L_1

Y0007596R9856B9L_1

RES 596.9856 OHM 0.6W 0.1% RAD

RWR78S10R0FRS73

RWR78S10R0FRS73

RES 10 OHM 10W 1% WW AXIAL

RN60D4530FRE6

RN60D4530FRE6

RES 453 OHM 1/4W 1% AXIAL

SIT1602BI-73-33S-66-666600G

SIT1602BI-73-33S-66-666600G

MEMS OSC XO 66.6666MHZ H/LV-CMOS

RTAP3ES12M25NP

RTAP3ES12M25NP

SWITCH ROTARY 12POS 20MA 25V

VI-26K-CU-S

VI-26K-CU-S

DC DC CONVERTER 40V 200W

LD6836TD-22P-125

LD6836TD-22P-125

IC REG LINEAR 2.2V 300MA 5TSOP

RSFDL-RUG_1

RSFDL-RUG_1

DIODE GEN PURP 200V 500MA SUBSMA

RS1B

RS1B

DIODE GEN PURP 100V 1A SMA

FW-39-02-F-D-200-075

FW-39-02-F-D-200-075

.050'' BOARD SPACERS