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1200 V|66A (Tc)|323W (Tc)
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SICFET N-CH 1200V 66A TO247-4
Specifications
- Brand
- Microchip Technology
- Package
- TO-247-4
- Packaging
- —
- Weight
- —
Total Inventory
261pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MSC040SMA120B4 from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microchip Technology | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V | |
| Vgs(th) (Max) @ Id | 2.6V @ 2mA | |
| Gate Charge (Qg) (Max) @ Vgs | 137 nC @ 20 V | |
| Vgs (Max) | +23V, -10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 1000 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 323W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-4 | |
| Package / Case | TO-247-4 |
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