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1200 V|100A (Tc)|357W (Tc)
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MOSFET SIC 1200V 17 MOHM TO-268
Specifications
- Brand
- Microchip Technology
- Package
- D3PAK
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MSC017SMA120S from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Microchip Technology | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | SiCFET (Silicon Carbide) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 40A, 20V | |
| Vgs(th) (Max) @ Id | 2.7V @ 4.5mA (Typ) | |
| Gate Charge (Qg) (Max) @ Vgs | 249 nC @ 20 V | |
| Vgs (Max) | +22V, -10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5280 pF @ 1000 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 357W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | D3PAK | |
| Package / Case | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA |
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