Heisener Electronics
BOM

MSC017SMA120B4

1200 V|113A (Tc)|455W (Tc)
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MOSFET SIC 1200V 17 MOHM TO-247

Specifications

Brand
Microchip Technology
Package
TO-247-4
Packaging
—
Weight
—

Total Inventory

105pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MSC017SMA120B4 from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrochip Technology
Series-
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C113A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs22mOhm @ 40A, 20V
Vgs(th) (Max) @ Id2.7V @ 4.5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs249 nC @ 20 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds5280 pF @ 1000 V
FET Feature-
Power Dissipation (Max)455W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4

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