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50V|100mA|246mW
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TRANS PREBIAS PNP 246MW SOT23-3
Specifications
- Brand
- ON Semiconductor
- Package
- TO-236-3, SC-59, SOT-23-3
- Packaging
- —
- Weight
- —
Total Inventory
9,203pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MMUN2116LT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| Transistor Type | PNP - Pre-Biased | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 4.7 kOhms | |
| Resistor - Emitter Base (R2) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| Frequency - Transition | - | |
| Power - Max | 246mW | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | SOT-23-3 (TO-236) |
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Datasheet & Documents
dta143tet1g.pdf
PDF Document · 11 pages
