Heisener Electronics
BOM

MMBTH10-7-F

25V|60 @ 4mA, 10V|300mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

RF TRANS NPN 25V 650MHZ SOT23-3

Specifications

Brand
Diodes Incorporated
Package
TO-236-3, SC-59, SOT-23-3
Packaging
—
Weight
—

Total Inventory

4,625pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MMBTH10-7-F from Diodes Incorporated fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerDiodes Incorporated
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)25V
Frequency - Transition650MHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max300mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 4mA, 10V
Current - Collector (Ic) (Max)50mA
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3

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Datasheet & Documents

mmbth10-7.pdf

PDF Document · 3 pages

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