Heisener Electronics
BOM

MMBTA13LT1G

30V|300mA|225mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN DARL 30V 0.3A SOT23

Specifications

Brand
ON Semiconductor
Package
TO-236-3, SC-59, SOT-23-3
Packaging
—
Weight
—

Total Inventory

46,818pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MMBTA13LT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)300mA
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Power - Max225mW
Frequency - Transition125MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

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Datasheet & Documents

mmbta14lt1.pdf

PDF Document · 7 pages

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Datasheet Preview

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